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AH115
The Communications Edge TM Product Information
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Features
x 1800 - 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 x 14 dB Gain @ 1960 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH115 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1-dB power. All devices are 100% RF and DC tested. The AH115 is available in leadfree/green/RoHS-compliant SOIC-8 package. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH115 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5 2 3 4
Applications
x Final stage amplifiers for Repeaters x Mobile Infrastructure
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance (4)
Min
1800 12.5 2140 14.4 23 8 +28.5 +42 +22.5 +20 200 5.3 250 +5 300
Units
MHz MHz dB dB dB dBm dBm dBm dBm dB mA V
Typ
Max
2300
Parameters
Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, @ -45 dBc ACLR
Units
MHz dB dB dB dBm dBm dBm dBm dB
Typical
1960 14.3 -12 -8 +28.3 +44 +22.5 +20 5 5.3 +5 V @ 250 mA
+26.5 +41
2140 14.4 -23 -8 +28.5 +42
wCDMA Channel Power Noise Figure Supply Bias
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure Operating Current Range (3) Device Voltage
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted. 25 C, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature
Parameter
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice

-40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC
Rating
Ordering Information
Part No.
AH115-S8G AH115-S8PCB1960 AH115-S8PCB2140
Description
1960 MHz Evaluation Board 2140 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1/2 Watt, High Linearity InGaP HBT Amplifier
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5
April 2006
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1/2 Watt, High Linearity InGaP HBT Amplifier
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C T = 25 C, calibrated to device leads)
35 30 25 G ain (dB) 20
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0
0.2
AH115
The Communications Edge TM Product Information
Typical Device Data
0. 8
6 0.
6 0.
Gain and Maximum Stable Gain
0. 4
Swp Max 5.05GHz
2. 0
1.0
0.8
1.0
0 3.
0 4.
10.0
15 10 5 0 0 0.5 1 1.5 Frequency (GHz) 2 2.5
5.0
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
.4 -0
.0 -2
-0 .6
-0 .6
.0 -2
-0.8
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 5050 MHz, with markers placed at 0.5 - 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang)
Swp Min 0.05GHz
-0 .8
-1.0
S12 (dB)
S12 (ang)
S22 (dB)
-1.0
S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-2.11 -1.59 -1.51 -1.45 -1.58 -1.78 -1.96 -2.46 -3.30 -4.70 -8.15 -19.01 -9.59 -4.09 -1.99 -1.12 -0.72
-172.90 -178.94 173.71 163.84 153.68 144.31 134.21 123.44 111.21 92.57 78.58 93.29 177.56 159.30 141.65 127.57 116.11
25.10 21.15 17.75 15.23 13.69 12.77 11.94 11.36 11.17 11.39 11.64 11.51 10.35 7.87 4.95 1.97 -0.88
133.84 126.67 124.19 111.50 98.94 84.57 69.70 55.57 40.93 22.80 1.64 -25.24 -55.97 -83.78 -105.90 -122.86 -136.93
-36.03 -35.22 -34.29 -34.45 -33.58 -32.84 -32.77 -31.79 -31.12 -30.30 -29.47 -29.31 -30.51 -32.59 -33.96 -34.68 -35.64
31.44 15.04 7.30 -2.16 -2.99 -12.80 -18.76 -30.73 -45.14 -61.92 -83.99 -112.79 -150.45 177.62 137.14 109.27 81.83
-2.06 -2.73 -2.80 -2.73 -1.96 -1.68 -1.85 -2.14 -2.30 -2.52 -2.43 -1.84 -1.22 -1.06 -1.07 -1.19 -1.44
-105.55 -138.75 -160.44 -174.00 -179.13 172.00 166.98 164.05 163.07 164.84 164.25 162.38 155.68 147.58 139.74 132.15 125.05
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 2 of 5
-4 .0 -5 . 0
-3 .0
-4 .0 -5. 0
2 -0.
2 -0 .
Sw p Min 0.05GHz
-10.0
0. 2
0 5.
0. 4
DB(GMax)
DB(|S[2,1]|)
2. 0
-1 0.0
-3 .0
S11
S22
Sw p Max 5.05GHz
0 3.
0 4.
5. 0
10 .0
April 2006
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1/2 Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25 qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+11 dBm / tone, 1 MHz spacing)
AH115
The Communications Edge TM Product Information
1960 MHz Application Circuit (AH115-S8PCB1960)
1960 MHz 14.3 dB -12 dB -8 dB +28.3 dBm +44 dBm +22.5 dBm 5 dB +5 V 250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
16 14
S21 (dB)
S11 vs. Freqency
0 -5
S11 (dB) S22 (dB)
S22 vs. Frequency
0 -5 -10 -15 -20 +25C +85C -40C 1940 1950 1960 1970 1980 1990
12 10 8 6 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990
-10 -15 -20 -25 1930 +25C 85C -40C 1940 1950 1960 1970 1980 1990
Frequency (MHz)
Frequency (MHz)
-25 1930
Frequency (MHz)
Noise Figure vs. Frequency
7 6
P1 dB (dBm)
P1 dB vs. Frequency
30 29
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 ch,Fwd, 885 KHz offset, 30 KHz Meas BW, 1960 MHz
-40 -45 -50 -55 -60 -65 -70 1940 1950 1960 1970 1980 1990 15 16 17 18 19 20 21 Frequency (MHz) +25C +85C -40C 22 23 24
5
NF (dB)
4 3 2 1 0 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990
28 27 26 25 24 1930 +25C +85C -40C
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power
freq=1960, 1961 MHz,+ 25 C
OIP3 vs. Frequency
+25C, +11 dBm / tone
OIP3 vs. Temperature
freq=1960,1961 MHz, +11 dBm / tone
46 44
OIP3 (dBm)
OIP3 (dBm)
46 44 42 40 38 36 1930
OIP3 (dBm)
46 44 42 40 38 36
1940 1950 1960 1970 1980 1990
42 40 38 36 8 10 12 14 16 Output Power (dBm) 18 20
-40
-15
10
35
60
85
Frequency (MHz)
Temperature (C)
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 5
April 2006
www..com
1/2 Watt, High Linearity InGaP HBT Amplifier
AH115
The Communications Edge TM Product Information
2140 MHz Application Circuit (AH115-S8PCB2140)
Typical RF Performance at 25 qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+11 dBm / tone, 1 MHz spacing)
2140 MHz 14.4 dB -23 dB -8 dB +28.5 dBm +42 dBm +20 dBm 5.3 dB +5 V 250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
16 14
S11 (dB) S21 (dB)
S11 vs. Frequency
0 -5 -10 -15 -20 -25 2110 +25C +85C
S22 (dB)
S22 vs. Frequency
0 -5 -10 -15 -20 -25 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170
12 10 8 6 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170
-40C
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
3GPP W-CDMA Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
Frequency (MHz)
Noise Figure vs. Frequency
8 7 6
ACPR (dBc)
ACPR vs. Channel Power
P1 dB vs. Frequency
30 28
P1 dB (dBm)
-35 -40 -45 -50 -55 -60 -65 +25C +85C -40C
NF (dB)
5 4 3 2 1 0 2110 2120 + 25C +85C -40C 2130 2140 2150 2160 2170
26 24 22 +25C +85C -40C 2120 2130 2140 2150 2160 2170
15
16
17
18
19
20
21
20 2110
Frequency (MHz)
Output Channel Power (dBm)
Frequency (MHz)
OIP3 vs. Frequency
+25C, +11 dBm / tone
freq. = 2140, 2141, +11 dBm / tone
OIP3 vs. Temperature
OIP3 vs. Output Power
45 43
OIP3 (dBm)
45 43
OIP3 (dBm) OIP3 (dBm)
45 43 41 39 37 35
freq. = 2140, 2141 MHz, 25 C
41 39 37 35 2110
41 39 37 35
2120
2130 2140 2150 Frequency (MHz)
2160
2170
-40
-15
10 35 Temperature ( C)
60
85
6
8
10
12
14
16
18
20
Output Power (dBm)
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 5
April 2006
www..com
1/2 Watt, High Linearity InGaP HBT Amplifier
AH115
The Communications Edge TM Product Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
AH115-S8G (Green / Lead-free SOIC-8 Package) Mechanical Information Outline Drawing Product Marking
The component will be marked with an "AH115G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "AH115-S8" or "ECP050G" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Land Pattern
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance (2), Rth Junction Temperature (3), Tjc
(1)
Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.

-40 to +85 qC 62 qC / W 162 qC
MTTF (million hrs)
Rating
100000
MTTF vs. GND Tab Temperature
10000
1000
100 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice
| | | |
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
(c)
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
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April 2006

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